Title :
A GaAs dual gate power FET for operation up to K band
Author :
Bumman Kim ; Hua Tserng ; Saunier, Paul
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Abstract :
This paper will report on a GaAs dual-gate power FET with 1.2mm gate width, 1.1W output power with 10.5dB gain at 10GHz. At 19.5GHz, a dynamic gain control range of 33dB with output power of 360mW has been obtained.
Keywords :
Dynamic range; Fabrication; Frequency; Gain control; Gallium arsenide; Instruments; MIM capacitors; Microwave FETs; Power amplifiers; Power generation;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156508
