DocumentCode :
2877170
Title :
Reduced FM noise GaAs FET microwave oscillators
Author :
Jai Joshi ; Debney, B.
Author_Institution :
Plessey Research (Caswell), Ltd., Northants, England
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
206
Lastpage :
207
Abstract :
This Paper will report on a theoretical investigation undertaken to understand the noise mechanisms in GaAs FET oscillators. An X-band GaAs FET free-running oscillator with an FM noise of -96db at 100kHz in a 1Hz bandwidth will be discussed.
Keywords :
Circuit noise; Frequency; Gallium arsenide; Impedance; Integrated circuit noise; Low-frequency noise; Microwave FETs; Microwave oscillators; Noise reduction; Output feedback;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156510
Filename :
1156510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2877170
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