• DocumentCode
    2877184
  • Title

    A 40ns junction-shorting PROM

  • Author

    Fukushima, T. ; Ueno, K. ; Matsuzaki, Y. ; Tanaka, K.

  • Author_Institution
    Fujitsu, Ltd., Kawasaki, Japan
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    172
  • Lastpage
    173
  • Abstract
    An 8K×8b junction-shorting PROM using a selective power-switching circuit in dual stage decoders will be detailed. Shallow V-groove isolation and wafer stepper process technologies resulted in a 7.14mm × 5.28mm chip with a 168μ2cell size.
  • Keywords
    Aluminum; Current supplies; Decoding; Diodes; Driver circuits; Inverters; Multiplexing; PROM; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156511
  • Filename
    1156511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877184