DocumentCode :
2877184
Title :
A 40ns junction-shorting PROM
Author :
Fukushima, T. ; Ueno, K. ; Matsuzaki, Y. ; Tanaka, K.
Author_Institution :
Fujitsu, Ltd., Kawasaki, Japan
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
172
Lastpage :
173
Abstract :
An 8K×8b junction-shorting PROM using a selective power-switching circuit in dual stage decoders will be detailed. Shallow V-groove isolation and wafer stepper process technologies resulted in a 7.14mm × 5.28mm chip with a 168μ2cell size.
Keywords :
Aluminum; Current supplies; Decoding; Diodes; Driver circuits; Inverters; Multiplexing; PROM; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156511
Filename :
1156511
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2877184
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