Title :
Analysis of low-frequency noise in a-Si:H thin-film transistor by using a unified model
Author :
Son, Younghwan ; Lee, Jaehong ; Lee, Jaeho ; Shin, Hyungcheol
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
Low-frequency noise characteristics are investigated in top contact type a-Si:H TFT. For analysis of low-frequency noise data, the unified noise model is applied which combine the carrier number and mobility fluctuations. These two mechanisms are confirmed as a main element of noise in a-Si:H TFT by using current-voltage (I-V) measurement and noise analysis. From the measured low-frequency noise characteristics, the effective trap density and scattering coefficient are extracted by using the unified noise model.
Keywords :
amorphous semiconductors; carrier density; carrier mobility; elemental semiconductors; semiconductor device measurement; semiconductor device models; semiconductor device noise; silicon; thin film transistors; Si:H; amorphous silicon; carrier number; current-voltage measurement; low-frequency noise analysis; mobility fluctuation; scattering coefficient; thin film transistor; trap density; unified noise model; Fluctuations; Logic gates; Low-frequency noise; Scattering; Surface roughness; Thin film transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992738
