Analysis of low-frequency noise in a-Si:H thin-film transistor by using a unified model

Author

Son, Younghwan ; Lee, Jaehong ; Lee, Jaeho ; Shin, Hyungcheol

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

4

Abstract

Low-frequency noise characteristics are investigated in top contact type a-Si:H TFT. For analysis of low-frequency noise data, the unified noise model is applied which combine the carrier number and mobility fluctuations. These two mechanisms are confirmed as a main element of noise in a-Si:H TFT by using current-voltage (I-V) measurement and noise analysis. From the measured low-frequency noise characteristics, the effective trap density and scattering coefficient are extracted by using the unified noise model.

Keywords

amorphous semiconductors; carrier density; carrier mobility; elemental semiconductors; semiconductor device measurement; semiconductor device models; semiconductor device noise; silicon; thin film transistors; Si:H; amorphous silicon; carrier number; current-voltage measurement; low-frequency noise analysis; mobility fluctuation; scattering coefficient; thin film transistor; trap density; unified noise model; Fluctuations; Logic gates; Low-frequency noise; Scattering; Surface roughness; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992738

Filename

5992738