Plasma damage failure analysis cases study by EBIC detection on nano-probing SEM system

Author

Tseng, Chiu E. ; Lin, Wen Pin ; Chen, Yi Heang

Author_Institution

Quality Div., Powerchip Technol. Corp., Hsinchu, Taiwan

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

4

Abstract

As the gate oxide pinhole case, to gain more insight of nature of the hillock defect, the cross-section TEM was necessary for analysis. In this work, we study new technique to detect precise failure point for TEM analysis and it combined the EBIC amplifier and nano-probing in a SEM system for PID (plasma charging induced damage) defect mode identification in the Memory Cell IC. And EBIC signal observation at different beam accelerating voltage energy and varied insulator thicknesses are also discussed.

Keywords

EBIC; MOS memory circuits; amplifiers; integrated circuit reliability; nanoelectronics; plasma applications; transmission electron microscopy; EBIC amplifier; EBIC detection; beam accelerating voltage energy; cross-section TEM analysis; electric beam induced current; gate oxide pinhole case; hillock defect; insulator thicknesses; memory cell IC; nanoprobing SEM system; plasma charging induced damage defect mode identification; plasma damage failure analysis; Acceleration; Detectors; Failure analysis; Insulators; Integrated circuits; Probes; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992739

Filename

5992739