DocumentCode :
2877213
Title :
A 33dB gain monolithic X-Ku band power amplifier module
Author :
Tsukii, T. ; Tajima, Y. ; Miller, Paul ; Mozzi, R. ; Tong, E.
Author_Institution :
Raytheon Research Division, Lexington, MA, USA
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
202
Lastpage :
203
Abstract :
A GaAs monolithic X-Ku-band amplifier module, with a typical gain of 33dB and minimum output power of 600mw across 8-18GHz, will be described.
Keywords :
Capacitors; Driver circuits; FETs; Gallium arsenide; Impedance matching; Performance gain; Power amplifiers; Power generation; Preamplifiers; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156512
Filename :
1156512
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2877213
بازگشت