Magnetic field orientation dependence of the terahertz radiation from GaAs/AlGaAs modulation-doped structures with varying AlGaAs spacer-layer thickness

Author

Estacio, Elmer ; Ponseca, Carlito, Jr. ; Quema, Alex ; Diwa, Gilbert ; Murukami, Hidetoshi ; Ono, Shingo ; Somintac, Armando ; Bailon, Michelle ; Salvador, Arnel ; Sarukura, Nobuhiko

Author_Institution

Inst. of Mol. Sci., Okazaki

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

The magnetic field orientation dependence of the terahertz radiation intensity from GaAs/AlGaAs modulation-doped structures with varying spacer thickness was investigated. Results are analyzed in the context of junction electric field, carrier mobility, and interface roughness.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; interface roughness; semiconductor heterojunctions; submillimetre waves; GaAs-AlGaAs; carrier mobility; electric field strength; interface roughness; magnetic field orientation dependence; modulation-doped heterostructures; terahertz radiation; Electron optics; Epitaxial layers; Gallium arsenide; High speed optical techniques; Magnetic field measurement; Magnetic fields; Optical modulation; Physics; Spectroscopy; Ultrafast optics; (160.4760) Optical properties; (320.7130) Ultrafast processes in condensed matter, including semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628602

Filename

4628602