Title :
Approximations to field-effect factor and their use in GIDL modeling
Author :
Kozhukhov, Nikita ; Oh, Byoungchan ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design.
Keywords :
MOSFET; approximation theory; semiconductor device models; GIDL modeling; NMOSFET; SRCAT; analytical approximations; field-effect factor; gate induced drain leakage current modeling; sphere-shaped recessed channel array transistor; transistor design; Approximation methods; Current measurement; Electric fields; Electric potential; MOSFET circuits; Semiconductor device measurement; Temperature measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992740
