DocumentCode
2877237
Title
Approximations to field-effect factor and their use in GIDL modeling
Author
Kozhukhov, Nikita ; Oh, Byoungchan ; Shin, Hyungcheol
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
4
Abstract
New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design.
Keywords
MOSFET; approximation theory; semiconductor device models; GIDL modeling; NMOSFET; SRCAT; analytical approximations; field-effect factor; gate induced drain leakage current modeling; sphere-shaped recessed channel array transistor; transistor design; Approximation methods; Current measurement; Electric fields; Electric potential; MOSFET circuits; Semiconductor device measurement; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992740
Filename
5992740
Link To Document