Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation

Author

Lloyd-Hughes, J. ; Castro-Camus, E. ; Fraser, M.D. ; Tan, H.H. ; Jagadish, C. ; Johnston, M.B.

Author_Institution

Dept. of Phys., Univ. of Oxford, Oxford

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the sub-picosecond lifetimes of these materials.

Keywords

III-V semiconductors; arsenic; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; iron; optical pumping; oxygen; spectral line breadth; terahertz wave spectra; GaAs:As; InP:Fe; InP:O; carrier dynamics simulations; ion damage; ion-implanted semiconductors; ion-implanted terahertz emitters; optical-pump experiments; subpicosecond lifetimes; terahertz emission spectral width; terahertz-probe experiments; ultrafast carrier capture; Absorption; Biomedical optical imaging; Gallium arsenide; Lifetime estimation; Optical pumping; Optical scattering; Particle beam optics; Semiconductor materials; Stimulated emission; Ultrafast optics; (300.6270) Far infrared spectroscopy; (320.7130) Ultrafast processes in condensed matter, including semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628606

Filename

4628606