Title :
Study of the charge leakage of dual layer Pt metal nanocrystal-based high-κ/SiO2 flash memory cell - a relaxation current point of view
Author :
Chen, Y.N. ; Pey, K.L. ; Goh, K.E.J. ; Lwin, Z.Z. ; Singh, P.K. ; Mahapatra, S.
Author_Institution :
Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
By comparing the relaxation current with pure Al2O3 layer, we postulate that the relaxation process of the dual layer Pt nanocrystal-based Al2O3/SiO2 stack mainly arise from the charge leak of the metal nanocrystals, which probably follows the Poole-Frankel behavior. The extracted relaxation current from the metal nanocrystals and its charge leak time constant provide a simple and effective characterization tool to detect the retention property of this Flash memory cell.
Keywords :
Poole-Frenkel effect; aluminium compounds; flash memories; high-k dielectric thin films; nanostructured materials; platinum; silicon compounds; (Al2O3-Pt)-SiO2; Poole-Frankel behavior; charge leakage time constant; dual layer flash memory cell; metal nanocrystals; relaxation current; Aluminum oxide; Dielectrics; Electric fields; Flash memory cells; Logic gates; Nanocrystals; Voltage measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992746
