• DocumentCode
    2877379
  • Title

    Back-side De-processing using CMP for bulk silicon 40-nm graphics processors

  • Author

    Wei, M.S. ; Teo, C.W. ; Chong, H.B. ; Lim, S.H. ; Narang, V. ; Chin, J.M. ; Ong, M.C.

  • Author_Institution
    Device Anal. Eng., Adv. Micro Devices (Singapore) Pte Ltd., Singapore, Singapore
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A back-side de-processing process by chemical mechanical polishing (CMP) is developed. The process has been optimized to produce repeatable results. The process is capable of exposing the circuitry of the die uniformly and is able to target more than one area for units with multiple defect locations; front-side de-processing process has difficulty achieving the same results due to the unevenness of the die.
  • Keywords
    chemical mechanical polishing; crystal defects; elemental semiconductors; microprocessor chips; silicon; CMP; Si; back-side deprocessing; bulk silicon graphics processors; chemical mechanical polishing; die uniformly; front-side deprocessing; multiple defect locations; size 40 nm; Force; Graphics; Optical imaging; Optical microscopy; Scanning electron microscopy; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992750
  • Filename
    5992750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877379