DocumentCode
2877427
Title
Terahertz emissions from semiconductors excited by femtosecond pulses at wavelengths of 1560, 1050 and 780 nm
Author
Suzuki, Masato ; Ohtake, H. ; Hirosumi, Tomoya ; Fujii, K.-i. ; Tonouchi, Masayoshi
Author_Institution
Inst. of Laser Eng., Osaka Univ., Suita
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
THz emissions from semiconductor surfaces excited by laser pulses at 780, 1050 and 1560 nm wavelengths have been investigated. InSb is the most efficient emitter for 1560 nm excitation in the other emitters.
Keywords
excited states; indium compounds; optical pulse shaping; semiconductor lasers; submillimetre waves; InSb; femtosecond pulses; semiconductor surfaces; semiconductors excited; terahertz emissions; wavelength 1050 nm; wavelength 1560 nm; wavelength 780 nm; Fiber lasers; Laser excitation; Laser mode locking; Laser theory; Optical pulse generation; Optical pulses; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Ultrafast optics; (060.4510) Optical communications; (320.7120) Ultrafast phenomena;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628614
Filename
4628614
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