Title :
Terahertz emissions from semiconductors excited by femtosecond pulses at wavelengths of 1560, 1050 and 780 nm
Author :
Suzuki, Masato ; Ohtake, H. ; Hirosumi, Tomoya ; Fujii, K.-i. ; Tonouchi, Masayoshi
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita
Abstract :
THz emissions from semiconductor surfaces excited by laser pulses at 780, 1050 and 1560 nm wavelengths have been investigated. InSb is the most efficient emitter for 1560 nm excitation in the other emitters.
Keywords :
excited states; indium compounds; optical pulse shaping; semiconductor lasers; submillimetre waves; InSb; femtosecond pulses; semiconductor surfaces; semiconductors excited; terahertz emissions; wavelength 1050 nm; wavelength 1560 nm; wavelength 780 nm; Fiber lasers; Laser excitation; Laser mode locking; Laser theory; Optical pulse generation; Optical pulses; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Ultrafast optics; (060.4510) Optical communications; (320.7120) Ultrafast phenomena;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628614
