Title :
Unipolar resistive switching and retention of RTA-treated zinc oxide (ZnO) resistive RAM
Author :
Lin, Cheng-Li ; Wu, Shu-Ching ; Tang, Chi-Chang ; Lai, Yi-Hsiu ; Yang, Syuan-Ren ; Wu, Shich-Chuan
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
This work investigates the effects of N2 RTA treatment on characteristics of ZnO film as resistive RAM (RRAM). In addition, we also study the leakage current behavior and conducting mechanism in the low resistance state (LRS) and high resistance state (HRS) of ZnO RRAM. From the electrical characteristics, the resistance ratio (HRS/LRS) can be larger than 1011, and the set and reset voltage is lower to around 0.3V and 2.2V, respectively. The RTA-treated ZnO RRAM reveals more improvement on the endurance up to 103 times. Presumably, the RTA treatment will induce more crystalline phases in ZnO film and rearranges and/or recover the oxygen vacancies and distribution in the film, and it is beneficial for the resistance switching. Low power and high resistance ratio (HRS/LRS) of ZnO RRAM can be finished for the RTA-treated ZnO RRAM with inexpensive Al metal electrode.
Keywords :
II-VI semiconductors; electrical conductivity; leakage currents; random-access storage; rapid thermal annealing; semiconductor thin films; switching; vacancies (crystal); wide band gap semiconductors; zinc compounds; RRAM; RTA-treatment; ZnO; conducting mechanism; film; leakage current; oxygen vacancies; reset voltage; resistance ratio; resistance state; resistive RAM; set voltage; unipolar resistive switching; Films; Leakage current; Random access memory; Resistance; Switches; Zinc oxide; RTA treatment; Resistive RAM (RRAM); Resistive switching; Switching cycle; Zinc oxide (ZnO);
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992754
