Title :
Photographic distinction of defects in multicrystalline Si by spectroscopic electroluminescence
Author :
Kudo, Kohei ; Suzuki, Hiroyoshi ; Matsumoto, Toru ; Sugimura, Emi ; Tani, Ayumi ; Tsujii, Shinichiro ; Takamoto, Soichiro ; Fuyuki, Takashi
Author_Institution :
Syst. Div., Hamamatsu Photonics K.K., Hamamatsu, Japan
Abstract :
We have developed spectroscopic EL imaging method to distinguish “intrinsic” or “extrinsic” defects on multicrystalline Si. Intrinsic defect has grain boundary, dislocations etc. Extrinsic defect has substrate breakage, cracks, shunt holes, etc. The EL method makes it possible to distinguish those defects.
Keywords :
cracks; crystal defects; dislocations; electroluminescence; elemental semiconductors; grain boundaries; silicon; substrates; Si; cracks; defects; dislocations; extrinsic defects; grain boundary; intrinsic defects; multicrystalline silicon; photographic distinction; shunt holes; spectroscopic electroluminescence; substrate breakage; Band pass filters; Electroluminescence; Imaging; Optical filters; Photovoltaic cells; Silicon; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992758
