• DocumentCode
    2877501
  • Title

    Photographic distinction of defects in multicrystalline Si by spectroscopic electroluminescence

  • Author

    Kudo, Kohei ; Suzuki, Hiroyoshi ; Matsumoto, Toru ; Sugimura, Emi ; Tani, Ayumi ; Tsujii, Shinichiro ; Takamoto, Soichiro ; Fuyuki, Takashi

  • Author_Institution
    Syst. Div., Hamamatsu Photonics K.K., Hamamatsu, Japan
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We have developed spectroscopic EL imaging method to distinguish “intrinsic” or “extrinsic” defects on multicrystalline Si. Intrinsic defect has grain boundary, dislocations etc. Extrinsic defect has substrate breakage, cracks, shunt holes, etc. The EL method makes it possible to distinguish those defects.
  • Keywords
    cracks; crystal defects; dislocations; electroluminescence; elemental semiconductors; grain boundaries; silicon; substrates; Si; cracks; defects; dislocations; extrinsic defects; grain boundary; intrinsic defects; multicrystalline silicon; photographic distinction; shunt holes; spectroscopic electroluminescence; substrate breakage; Band pass filters; Electroluminescence; Imaging; Optical filters; Photovoltaic cells; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992758
  • Filename
    5992758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877501