Title :
Interface analysis of epi-Si(111)/Y2O3/Pr2O3/Si(111) heterostructures
Author :
Yang, J. -M ; Kim, J.W. ; Wilke, A. ; Seifarth, O. ; Schroeder, T.
Author_Institution :
Nat. Nanofab Center (NNFC), Daejeon, South Korea
Abstract :
Strain engineering of thin epitaxial Si thin films on insulating oxide buffers is of special interest to boost charge carrier mobility for SOI technologies. The single crystalline Si(111)/Y2O3(111)/Pr2O3(111)/Si(111) heterostructure offers, in principle, the opportunity to grow strain-engineered epitaxial Si(111) layers, realizing compressed, fully relaxed, as well as tensile-strained Si films. The interface structures were precisely analyzed at the atomic scale through Cs-corrected STEM/EELS study.
Keywords :
carrier mobility; electron energy loss spectra; elemental semiconductors; interface structure; praseodymium compounds; scanning-transmission electron microscopy; semiconductor epitaxial layers; silicon; silicon-on-insulator; yttrium compounds; SOI technology; STEM-EELS analysis; Si-Y2O3-Pr2O3-Si; charge carrier mobility; epitaxial thin films; heterostructures; insulating oxide buffers; interface analysis; interface structures; strain engineering; tensile-strained films; Atomic layer deposition; Epitaxial growth; Position measurement; Silicon; Silicon on insulator technology; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992761
