Reliability characterizations of resistive switching devices using zinc oxide thin film

In this work, Pt/ZnO/Pt capacitors were fabricated and investigated for nonvolatile memory applications. The memory devices exhibit inerratic and reproducible bipolar resistive switching characteristics. A forming electric field is required to induce the resistive switching property. The reliability characteristics of program/erase cycling endurance and data retention were measured. The high/low resistance states and specific set/reset voltages were examined by Weibull plots. In addition, the relationship between specific voltages and temperatures was also discussed.