Title :
Metal pad failure phenomena of biosensor due to spontaneous nickel silicide formation
Author :
Lee, Boung Ju ; Oh, Jae Sub ; Lee, Seok Jae
Author_Institution :
Nat. NanoFab Center, Daejeon, South Korea
Abstract :
A FET (Field Effect Transistor) biosensor chip for an early diagnosis of disease was fabricated using semiconductor process. Metal pad failure phenomena were found after pad metal deposition process. The electrical I-V performance and cross-sectional TEM inspection were done to find out the root cause of this failure. The nickel silicide growth between Ni UBM (Under Bump Metal) and Si substrate was found. The root cause of this metal pad failure was proved to be the interfacial spontaneous nickel silicide reaction between Ni pad and top Si layers.
Keywords :
elemental semiconductors; field effect transistors; nickel; patient diagnosis; semiconductor device reliability; silicon; transmission electron microscopy; FET; Ni-Si; Si; biosensor chip; cross-sectional TEM inspection; early disease diagnosis; electrical I-V performance; field effect transistor; metal pad failure phenomena; nickel silicide growth; nickel under bump metal; semiconductor process; silicon substrate; spontaneous nickel silicide formation; Biosensors; FETs; Fabrication; Nickel; Silicides; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992763
