Metal pad failure phenomena of biosensor due to spontaneous nickel silicide formation

Author

Lee, Boung Ju ; Oh, Jae Sub ; Lee, Seok Jae

Author_Institution

Nat. NanoFab Center, Daejeon, South Korea

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

3

Abstract

A FET (Field Effect Transistor) biosensor chip for an early diagnosis of disease was fabricated using semiconductor process. Metal pad failure phenomena were found after pad metal deposition process. The electrical I-V performance and cross-sectional TEM inspection were done to find out the root cause of this failure. The nickel silicide growth between Ni UBM (Under Bump Metal) and Si substrate was found. The root cause of this metal pad failure was proved to be the interfacial spontaneous nickel silicide reaction between Ni pad and top Si layers.

Keywords

elemental semiconductors; field effect transistors; nickel; patient diagnosis; semiconductor device reliability; silicon; transmission electron microscopy; FET; Ni-Si; Si; biosensor chip; cross-sectional TEM inspection; early disease diagnosis; electrical I-V performance; field effect transistor; metal pad failure phenomena; nickel silicide growth; nickel under bump metal; semiconductor process; silicon substrate; spontaneous nickel silicide formation; Biosensors; FETs; Fabrication; Nickel; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992763

Filename

5992763