DocumentCode :
2877779
Title :
Reliability characteristics of cerium dioxide thin films
Author :
Chiu, Fu-Chien ; Chang, Shu-Hao ; Huang, Chih-Yao
Author_Institution :
Dept. of Electron. Eng., Ming-Chuan Univ., Taoyuan, Taiwan
fYear :
2011
fDate :
4-7 July 2011
Firstpage :
1
Lastpage :
4
Abstract :
The reliability characteristics of CeO2 thin films were studied. During stressing, stress-induced leakage current and charge trapping are dominant at low field and high field, respectively. The trap capture cross-sections are extracted to be around 5.7×10-19 cm2 and 3.5×10-14 cm2 in the event of “stressing” and “breakdown”, respectively.
Keywords :
cerium compounds; electric breakdown; electron traps; leakage currents; reliability; thin films; CeO2; breakdown; cerium dioxide thin films; charge trapping; reliability; stress-induced leakage current; stressing; Charge carrier processes; Current density; Dielectrics; Electric breakdown; Hafnium compounds; Reliability; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
ISSN :
1946-1542
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2011.5992770
Filename :
5992770
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2877779
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