Title :
Synthesis of Si nano-pyramids at SiOx/Si interface for enhancing electroluminescence of Si-rich SiOx based MOS diode
Author :
Lin, Chun-Jung ; Lin, Chi-Kuan ; Lin, Gong-Ru
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
Abstract :
A 740nm electro-luminescent ITO/SiOx/p-Si/Al MOS diode with Si nano-pyramids synthesized at SiOx/Si interface is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.
Keywords :
electroluminescent devices; indium compounds; semiconductor diodes; silicon; silicon compounds; ITO-SiO-Si-Al; MOS diode; electroluminescence; electroluminescent; nanopyramids; power 30 nW; synthesis; threshold current; time 10 hr; turn on voltage; voltage 50 V; wavelength 740 nm; Annealing; Diodes; Indium tin oxide; Optical films; Plasma temperature; Power generation; Semiconductor films; Silicon; Substrates; Voltage; (160.2540) Fluorescent and luminescent materials; (310.6870) Thin films, other properties;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628634
