• DocumentCode
    2877802
  • Title

    Synthesis of Si nano-pyramids at SiOx/Si interface for enhancing electroluminescence of Si-rich SiOx based MOS diode

  • Author

    Lin, Chun-Jung ; Lin, Chi-Kuan ; Lin, Gong-Ru

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 740nm electro-luminescent ITO/SiOx/p-Si/Al MOS diode with Si nano-pyramids synthesized at SiOx/Si interface is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.
  • Keywords
    electroluminescent devices; indium compounds; semiconductor diodes; silicon; silicon compounds; ITO-SiO-Si-Al; MOS diode; electroluminescence; electroluminescent; nanopyramids; power 30 nW; synthesis; threshold current; time 10 hr; turn on voltage; voltage 50 V; wavelength 740 nm; Annealing; Diodes; Indium tin oxide; Optical films; Plasma temperature; Power generation; Semiconductor films; Silicon; Substrates; Voltage; (160.2540) Fluorescent and luminescent materials; (310.6870) Thin films, other properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628634
  • Filename
    4628634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877802