Wideband microwave/millimeter-wave solid-state amplifiers

Rapid strides have been made in recent years in the design and development of ultra-wideband solid-state amplifiers. A variety of design approaches based on GaAs FET and silicon bipolar technologies have been proposed. These include, among others, balanced amplifiers with couplers, reactive and resistive gain compensated circuits, feedback amplifiers, and traveling wave or distributed amplifiers . . . Panelists will discuss the attributes of these various design approaches and technologies, with respect to electrical performance, compatibility with the hybrid and monolithic approaches, cost, applicability to military, commercial and consumer markets, among others.