Title :
Threshold voltage changed by floating gate control in electrolyte-insulator-semiconductor structure
Author :
Kwon, Hyurk-Choon ; Yuan, Heng ; Yeom, Se-Hyuk ; Kang, Shin-Won
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
A method for controlling the threshold voltage which has a significant problem in ion-sensitive transistors (IST) with floating gate structures was proposed in this study. Gated lateral pnp-type bipolar junction transistor (BJT) was used in our experiment and was immerged in ionic solution. The experiment results indicated that under a large negative gate bias condition, the threshold voltage can shift in normal state with specific bias. Moreover, we discussed the reasons for the changing phenomenon of threshold voltage in dielectric of gated lateral BJT in electrolyte.
Keywords :
bipolar transistors; dielectric materials; electrolytes; ion sensitive field effect transistors; semiconductor-insulator boundaries; voltage control; BJT; dielectrics; electrolyte-insulator-semiconductor structure; floating gate control; floating gate structures; ion-sensitive transistors; ionic solution; negative gate bias; pnp-type bipolar junction transistor; threshold voltage control; Dielectrics; Electric potential; Electrodes; Logic gates; Silicon; Silicon compounds; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992783
