Title :
[Copyright notice]
fDate :
Sept. 28 2010-Oct. 1 2010
Abstract :
The following topics dealt with: rapid thermal process slip window; SiC stressor layers; laser crystallization; large single grain silicon; laser thermal annealing; thin SiGe channels; Ni-based silicide formation; thermal coefficient of electrical resistance; titanium silicide Schottky barriers; Cu(In,Ga)Se2 layer formation; selective emitter crystalline Si solar cell; nitric oxide rapid thermal nitridation; and doping.
Keywords :
Ge-Si alloys; copper compounds; crystallisation; elemental semiconductors; gallium compounds; indium compounds; laser beam annealing; nickel compounds; nitridation; rapid thermal annealing; semiconductor doping; silicon; silicon compounds; solar cells; ternary semiconductors; thermoelectricity; titanium compounds; wide band gap semiconductors; Ni-based silicide formation; doping; large single grain silicon; laser crystallization; laser thermal annealing; nitric oxide rapid thermal nitridation; rapid thermal process slip window; selective emitter crystalline solar cell; stressor layers; thermal coefficient of electrical resistance; titanium silicide Schottky barriers;
Conference_Titel :
Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
Conference_Location :
Gainesville, FL
Print_ISBN :
978-1-4244-8400-3
DOI :
10.1109/RTP.2010.5623608
