Title :
Depletion-type GaAs MSI 32b adder
Author :
Yamamoto, Ryo ; Higashisaka, A. ; Asai, Satoshi ; Tsuji, Takao ; Takayama, Yoichiro ; Yano, Sumio
Author_Institution :
Nippon Electric Microelectronics Research Laboratories, Kawasaki, Japan
Abstract :
A GaAs MSI 32b adder, using depletion-type 8FL gates, will be described. The circuit uses 420 gates (2100 FETs and 420 diodes) within an area of 4.6mm×2.5mm. A 3ns carry propagation delay was obtained with 340mW total power dissipation.
Keywords :
Adders; Delay; Diodes; FETs; Gallium arsenide; Integrated circuit interconnections; Large scale integration; Logic gates; Power dissipation; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156557
