• DocumentCode
    2878066
  • Title

    Depletion-type GaAs MSI 32b adder

  • Author

    Yamamoto, Ryo ; Higashisaka, A. ; Asai, Satoshi ; Tsuji, Takao ; Takayama, Yoichiro ; Yano, Sumio

  • Author_Institution
    Nippon Electric Microelectronics Research Laboratories, Kawasaki, Japan
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    40
  • Lastpage
    41
  • Abstract
    A GaAs MSI 32b adder, using depletion-type 8FL gates, will be described. The circuit uses 420 gates (2100 FETs and 420 diodes) within an area of 4.6mm×2.5mm. A 3ns carry propagation delay was obtained with 340mW total power dissipation.
  • Keywords
    Adders; Delay; Diodes; FETs; Gallium arsenide; Integrated circuit interconnections; Large scale integration; Logic gates; Power dissipation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156557
  • Filename
    1156557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878066