• DocumentCode
    2878088
  • Title

    A 4GHz 25mW GaAs IC using source coupled FET logic

  • Author

    Shimano, A. ; Katsu, S. ; Nambu, S. ; Kano, G.

  • Author_Institution
    Matsushita Semiconductor Laboratory, Osaka, Japan
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    A GaAs binary frequency divider with a 0.5μm gate, based on source-coupled FET logic, in which the FET threshold voltage can range from -0.9V to +0.2V, will be reported. Circuit has demonstrated 4GHz performance with 25mW power consumption.
  • Keywords
    Clocks; FET integrated circuits; Frequency conversion; Gallium arsenide; Gold; Inverters; Logic; MESFETs; Power dissipation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156559
  • Filename
    1156559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878088