Landscape for semiconductor analysis: Issues and challenges

This paper summarizes the landscape for semiconductor analysis. High-resolution imaging and microanalysis are discussed first because they are used in most of the core process technologies that enable device scaling beyond the current 30 nm technology node. Key technology for analysis of dopant distribution, contamination, and strain is reviewed from the viewpoints of sensitivity, spatial resolution, contamination level, and defect size. The final section describes microscopy based on in situ techniques, which can play an important role in developing extended complementary metal-oxide-semiconductor (CMOS) and beyond CMOS as well as play a role in understanding the fundamental physics of new and emerging semiconductor devices. Within each technology area, future directions that are being driven by new materials and processes are briefly outlined.