• DocumentCode
    2878479
  • Title

    The Study on Sensitive Port of Silicon transistors Caused by ESD

  • Author

    Shufeng, QI ; Shanghe, Liu ; Hongbing, LIU ; Jie, Yang

  • Author_Institution
    Inst. of Electrostatic & Electromagn. Protection Res., Shijiazhuang Mech. Eng. Coll., Hebei
  • fYear
    2006
  • fDate
    1-4 Aug. 2006
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    This paper deals with a sensitive ports study on typical silicon transistors caused by human body model (HBM) electrostatic discharge (ESD). It is shown that the most sensitive port is not always the EB junctions, as most scholars have stated
  • Keywords
    electrostatic discharge; elemental semiconductors; silicon; transistors; ESD; HBM; electrostatic discharge; human body model; silicon transistors sensitive port; Atmospheric modeling; Biological system modeling; Bipolar transistors; Circuit simulation; Electrostatic discharge; Humans; Microwave transistors; Silicon; Stress; Testing; ESD; sensitivity; transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
  • Conference_Location
    Dalian
  • Print_ISBN
    1-4244-0183-6
  • Type

    conf

  • DOI
    10.1109/CEEM.2006.257908
  • Filename
    4027240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878479