Title :
Fine line NMOS transresistance amplifiers
Author :
Abidi, Abdessalem ; Kasper, B. ; Kushner, R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Two broadband transresistance amplifiers with bandwidths of about 700MHz, using one micron channel length NMOS devices, and incorporating a voltage controllable gain stage and a temperature tracking circuit, will be reported. One amplifier has been used as a front end for a fiber optics system operating at 800Mb/s.
Keywords :
Bandwidth; Broadband amplifiers; Circuits; MOS devices; Optical amplifiers; Optical fiber amplifiers; Optical fibers; Semiconductor optical amplifiers; Temperature control; Voltage control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156584
