Title :
Superstrate-type CuInSe2 solar cells with chemically deposited CdS window layers
Author :
Nakada, Toklo ; Okano, Nobukata ; Tanaka, Yoshtyukl ; Fukuda, Hiroyuki ; Kunioka, Akio
Author_Institution :
Dept. of Electr. Eng. & Electron., Aoyama Gakuin Univ., Tokyo, Japan
Abstract :
Chemically deposited CdS was used for window layers of superstrate-type CIS solar cells. The CBD-CdS layers had no pinholes and had higher optical transmission at short wavelengths than evaporated CdS layers, which led to the increase in Jsc. Relatively high substrate temperature of 450°C was used for CIS deposition, resulting in high Voc due to improved crystallinity of CIS films. However, the interdiffusion and alloy formation at CIS/CdS deteriorated cell performance. The best cell yielded an efficiency of 8.1% with Voc=440 mV, Jsc=34 mA/cm2 and FF=0.54 using near-stoichiometric (Cu/In=0.91-0.98) CIS films
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; electrodeposition; electrodeposits; indium compounds; p-n heterojunctions; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; 440 mV; 450 C; 8.1 percent; CdS; CuInSe2; alloy formation; chemical bath deposition; chemical deposition; crystallinity; interdiffusion; optical transmission; performance; short-circuit current density; substrate temperature; superstrate-type solar cells; thin film semiconductor; window layers; Chemicals; Computational Intelligence Society; Crystallization; Crystallography; Glass; Gold; Optical films; Photovoltaic cells; Substrates; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519816
