Title :
A 128K word × 8b DRAM
Author :
Suzuki, Satoshi ; Nakao, Masahiro ; Takeshima, Toshiaki ; Yoshida, Manabu ; Kikuchi, Masashi ; Nakamura, Kentaro
Author_Institution :
NEC Corp., Kawasaki, Japan
Keywords :
Circuit noise; Coupling circuits; DRAM chips; Decoding; Noise cancellation; Noise figure; Noise level; Random access memory; Read-write memory; Wiring;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156592
