DocumentCode

2878614

Title

A 128K word × 8b DRAM

Author

Suzuki, Satoshi ; Nakao, Masahiro ; Takeshima, Toshiaki ; Yoshida, Manabu ; Kikuchi, Masashi ; Nakamura, Kentaro

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

XXVII

fYear

1984

fDate

22-24 Feb. 1984

Firstpage

106

Lastpage

107

Keywords

Circuit noise; Coupling circuits; DRAM chips; Decoding; Noise cancellation; Noise figure; Noise level; Random access memory; Read-write memory; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International

Conference_Location

San Francisco, CA, USA

Type

conf

DOI

10.1109/ISSCC.1984.1156592

Filename

1156592