Title :
670 GHz power amplifier development at Northrop Grumman
Author :
Tucek, J.C. ; Basten, M.A. ; Gallagher, D.A. ; Kreischer, K.E.
Author_Institution :
Northrop Grumman, Rolling Meadows, IL, USA
Abstract :
Summary form only given. Northrop Grumman Electronic Systems (NGES) is developing compact, efficient sources above 100 GHz as part of the DARPA THz Electronics (THzE) program. The THzE Phase I goal is a high duty amplifier producing 100 mW of RF power at 670 GHz. These devices will use advanced, high current density cathodes, a folded waveguide as the slow-wave circuit, and a depressed collector for overall device efficiency. Operation at duty cycles of 50-100% is anticipated. Realization of fully-integrated high power amplifiers at these frequencies will have a significant impact on a variety of defense applications including covert, high data-rate communication, airborne collision avoidance systems, and high resolution radar imaging.
Keywords :
power amplifiers; radar imaging; submillimetre wave amplifiers; NGES; Northrop Grumman electronic system; RF power; airborne collision avoidance systems; folded waveguide; frequency 670 GHz; fully-integrated high power amplifiers; high current density cathodes; high data-rate communication; high resolution radar imaging; power 100 mW; Radio frequency;
Conference_Titel :
Plasma Science (ICOPS), 2011 Abstracts IEEE International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-61284-330-8
Electronic_ISBN :
0730-9244
DOI :
10.1109/PLASMA.2011.5992893
