670 GHz power amplifier development at Northrop Grumman

Author

Tucek, J.C. ; Basten, M.A. ; Gallagher, D.A. ; Kreischer, K.E.

Author_Institution

Northrop Grumman, Rolling Meadows, IL, USA

fYear

2011

fDate

26-30 June 2011

Firstpage

1

Lastpage

1

Abstract

Summary form only given. Northrop Grumman Electronic Systems (NGES) is developing compact, efficient sources above 100 GHz as part of the DARPA THz Electronics (THzE) program. The THzE Phase I goal is a high duty amplifier producing 100 mW of RF power at 670 GHz. These devices will use advanced, high current density cathodes, a folded waveguide as the slow-wave circuit, and a depressed collector for overall device efficiency. Operation at duty cycles of 50-100% is anticipated. Realization of fully-integrated high power amplifiers at these frequencies will have a significant impact on a variety of defense applications including covert, high data-rate communication, airborne collision avoidance systems, and high resolution radar imaging.

Keywords

power amplifiers; radar imaging; submillimetre wave amplifiers; NGES; Northrop Grumman electronic system; RF power; airborne collision avoidance systems; folded waveguide; frequency 670 GHz; fully-integrated high power amplifiers; high current density cathodes; high data-rate communication; high resolution radar imaging; power 100 mW; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science (ICOPS), 2011 Abstracts IEEE International Conference on

Conference_Location

Chicago, IL

ISSN

0730-9244

Print_ISBN

978-1-61284-330-8

Electronic_ISBN

0730-9244

Type

conf

DOI

10.1109/PLASMA.2011.5992893

Filename

5992893