Title :
A submicron VLSI memory with a 4b-at-a-time built-in ECC circuit
Author :
Yamada, Junzo ; Mano, Tsuneo ; Inoue, Jun´ichi ; Nakajima, Shigeru ; Matsuda, Tadamitsu
Author_Institution :
NTT Atsugi Electrical Comm. Lab., Tokyo, Japan
Keywords :
CMOS technology; Circuits; Error correction codes; MOS devices; MOSFETs; Preamplifiers; Random access memory; Very large scale integration; Voltage; Wiring;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156602
