DocumentCode

2878792

Title

A submicron VLSI memory with a 4b-at-a-time built-in ECC circuit

Author

Yamada, Junzo ; Mano, Tsuneo ; Inoue, Jun´ichi ; Nakajima, Shigeru ; Matsuda, Tadamitsu

Author_Institution

NTT Atsugi Electrical Comm. Lab., Tokyo, Japan

Volume

XXVII

fYear

1984

fDate

22-24 Feb. 1984

Firstpage

104

Lastpage

105

Keywords

CMOS technology; Circuits; Error correction codes; MOS devices; MOSFETs; Preamplifiers; Random access memory; Very large scale integration; Voltage; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International

Conference_Location

San Francisco, CA, USA

Type

conf

DOI

10.1109/ISSCC.1984.1156602

Filename

1156602