DocumentCode :
2879040
Title :
Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors
Author :
Warburton, Ryan E. ; Pellegrini, Sara ; Tan, Lionel ; Ng, Jo Shien ; Krysa, Andrey ; Groom, Kris ; David, John P R ; Cova, Sergio ; Buller, Gerald S.
Author_Institution :
Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550 nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; jitter; optical design techniques; photodetectors; Geiger-mode operation; InGaAs-InP; dark count rate; photon-timing jitter; single-photon avalanche diode detectors; single-photon detection efficiency; Avalanche photodiodes; Circuit testing; Diodes; Envelope detectors; Fabrication; Geometry; Indium gallium arsenide; Indium phosphide; Temperature; Timing jitter; 040.5160; 040.5570;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628704
Filename :
4628704
Link To Document :
بازگشت