Title :
A 3ns GaAs 4K × 1b SRAM
Author :
Yokoyama, Naoki ; Onodera, Hidetoshi ; Shinoki, T. ; Ohnishi, H. ; Nishi, Hidetaka ; Shibatomi, A.
Author_Institution :
Fujitsu Compound Semicond. Devices Lab., Atsugi, Japan
Abstract :
A 3ns 700mW GaAs 4K × 1b SRAM using tungsten-silicide gate, self-aligned technology, will be described. The development uses 1.5μm gates, E/D direct coupled FET logic and 2μm line-width metalization.
Keywords :
Capacitance; Circuits; FETs; Gallium arsenide; MESFETs; Power dissipation; Random access memory; Threshold voltage; Transconductance; Wiring;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156623
