Title :
Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures
Author :
Shterengas, L. ; Ongstad, A. ; Kaspi, R. ; Suchalkin, S. ; Belenky, G. ; Kisin, M. ; Donetsky, D.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY
Abstract :
Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.
Keywords :
III-V semiconductors; electron density; gallium arsenide; gallium compounds; high-speed optical techniques; hole density; indium compounds; optical frequency conversion; photoluminescence; quantum well lasers; semiconductor quantum wells; time resolved spectra; InGaAsSb-InAs-InGaSb; carrier capture; electron concentration dynamics; electron relaxation rate; hole concentration dynamics; hole relaxation rate; quantum-well carrier confinement energies; semiconductor lasers; time resolved photoluminescence; type-II quantum-well laser heterostructures; ultrafast luminescence upconversion technique; Charge carrier processes; Gas lasers; Optical pumping; Optical saturation; Optical sensors; Photoluminescence; Pump lasers; Semiconductor lasers; Temperature sensors; Ultrafast optics; (140.5960) Semiconductor lasers; (320.7100) Ultrafast measurements;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628718
