Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

Author

Shterengas, L. ; Ongstad, A. ; Kaspi, R. ; Suchalkin, S. ; Belenky, G. ; Kisin, M. ; Donetsky, D.

Author_Institution

State Univ. of New York at Stony Brook, Stony Brook, NY

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

Keywords

III-V semiconductors; electron density; gallium arsenide; gallium compounds; high-speed optical techniques; hole density; indium compounds; optical frequency conversion; photoluminescence; quantum well lasers; semiconductor quantum wells; time resolved spectra; InGaAsSb-InAs-InGaSb; carrier capture; electron concentration dynamics; electron relaxation rate; hole concentration dynamics; hole relaxation rate; quantum-well carrier confinement energies; semiconductor lasers; time resolved photoluminescence; type-II quantum-well laser heterostructures; ultrafast luminescence upconversion technique; Charge carrier processes; Gas lasers; Optical pumping; Optical saturation; Optical sensors; Photoluminescence; Pump lasers; Semiconductor lasers; Temperature sensors; Ultrafast optics; (140.5960) Semiconductor lasers; (320.7100) Ultrafast measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628718

Filename

4628718