• DocumentCode
    2879293
  • Title

    Oxide confined vertical cavity laser - depleted optical thyristor

  • Author

    Choi, W.K. ; Kim, D.G. ; Choi, Y.W. ; Choquette, Kent D. ; Lee, S. ; Woo, D.H.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Chung-Ang Univ., Seoul
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This study shows the optical properties of a vertical cavity laser(VCL) - depleted optical thyristor(DOT) fabricated using selective oxidation. The oxide confined PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics.
  • Keywords
    oxidation; photothyristors; semiconductor lasers; surface emitting lasers; depleted optical thyristor; lasing characteristic; nonlinear s-shaped current-voltage; oxide confined vertical cavity laser; selective oxidation; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical sensors; Oxidation; Stimulated emission; Surface emitting lasers; Threshold current; Thyristors; Vertical cavity surface emitting lasers; (250.7260) Vertical cavity surface emitting lasers; (250.7270) Vertical emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628719
  • Filename
    4628719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2879293