DocumentCode
2879477
Title
An 8b 100MS/s flash ADC
Author
Yoshii, Y. ; Asano, Katsunori ; Nakamura, Mitsutoshi ; Yamada, Chikatoshi
Author_Institution
Sony Corp., Kanagawa, Japan
Volume
XXVII
fYear
1984
fDate
22-24 Feb. 1984
Firstpage
58
Lastpage
59
Abstract
This paper will describe an 8b flash ADC which achieves a conversion rate of 100MHz arid an input bandwidth of 30MHz at a power dissipation of 1200mW. The circuit is realized in an epitaxial-LOCOS process with a minimum line width of 2.5μm and a transistor fT of 4GHz at 45μA collector current.
Keywords
Sampling methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1984.1156644
Filename
1156644
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