Title :
High power GaSb-based optically pumped VECSEL at 2.3 μm
Author :
Schulz, N. ; Rattunde, M. ; Manz, C. ; Köhler, K. ; Wild, C. ; Wagner, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
Abstract :
We report on the operation and characterization of a GaSb-based VECSEL at 2.33 mum. Using an intra-cavity CVD diamond heat spreader, a maximum output power of 0.6W was obtained, and still 0.4 W in TEM00 mode (M2=1.1).
Keywords :
III-V semiconductors; chemical vapour deposition; diamond; gallium compounds; laser beams; laser cavity resonators; laser modes; optical pumping; semiconductor lasers; surface emitting lasers; thermo-optical devices; C; GaSb; TEM00 mode; high-power optically pumped VECSEL; intra-cavity CVD diamond heat spreader; power 0.4 W; power 0.6 W; wavelength 2.33 mum; Gas lasers; Laser beams; Laser modes; Optical pumping; Optical resonators; Power generation; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.3070) Infrared and far-infrared lasers; (140.3570) Lasers, single-mode; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628737
