Lasing characteristics of GaN vertical-cavity surface-emitting lasers with dielectric DBRs fabricated by laser-lift-off technique

Author

Chu, Jung Tang ; Yao, Hsin Hung ; Liang, Wen Deng ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, S.C.

Author_Institution

Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

The lasing characteristics of a GaN VCSEL with two dielectric DBRs of SiO₂/TiO₂ and SiO₂/Ta₂O₅ were investigated. The laser emits wavelength at 414 nm under optical pumping at room temperature with a threshold energy of 270 nJ.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; laser beams; optical fabrication; optical pumping; silicon compounds; surface emitting lasers; tantalum compounds; titanium compounds; GaN; SiO₂-Ta₂O₅; SiO₂-TiO₂; VCSEL; dielectric DBR; energy 270 nJ; laser threshold energy; laser-lift-off technique; lasing characteristics; optical pumping; temperature 293 K to 298 K; vertical-cavity surface-emitting lasers; wavelength 414 nm; Dielectrics; Distributed Bragg reflectors; Gallium nitride; Optical pumping; Pump lasers; Quantum well devices; Reflectivity; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; (140.2020) Diode lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628739

Filename

4628739