Title :
A Stackable Silicon Interposer with Integrated Through-Wafer Inductors
Author :
Carlson, J. ; Lueck, M. ; Bower, C.A. ; Temple, D. ; Feng, Z.-P. ; Steer, M.B. ; Moll, A.J. ; Knowlton, W.B.
Author_Institution :
RTI Int., Research Triangle Park
fDate :
May 29 2007-June 1 2007
Abstract :
Three-dimensional (3-D) device stacking technologies provide an effective path to the miniaturization of electronic systems. These 3-D stacks can be envisioned to contain, in addition to active device layers, interposers with passive devices. The stackable interposer concept is compatible with any integratable passive device architecture, but is particularly well suited to 3-D enabled passives which take advantage of the bulk of the layer and the connectivity on two surfaces. In this paper we report on the design, fabrication and electrical characteristics of a 3-D enabled solenoidal inductor.
Keywords :
inductors; silicon; solenoids; stacking; wafer-scale integration; silicon interposer; solenoidal inductor; three-dimensional device stacking technology; wafer inductors; Conductivity; Copper; Fabrication; Integrated circuit interconnections; Resists; Routing; Silicon; Stacking; Substrates; Thin film inductors;
Conference_Titel :
Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th
Conference_Location :
Reno, NV
Print_ISBN :
1-4244-0985-3
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2007.373952
