Title :
85% power conversion efficiency 975-nm broad area diode lasers at − 50°C, 76 % at 10°C
Author :
Crump, Paul ; Grimshaw, Mike ; Wang, Jun ; Dong, Weimin ; Zhang, Shiguo ; Das, Suhit ; Farmer, Jason ; DeVito, Mark ; Meng, Lei S. ; Brasseur, Jason K.
Author_Institution :
nLight Corp, Vancouver, WA
Abstract :
Optimized single stripe 975-nm broad area devices deliver 76% power conversion efficiency at 10degC. Cooling the material leads to 85% efficiency at -50degC. External differential quantum efficiency is the dominant term.
Keywords :
semiconductor lasers; broad area devices; broad area lasers; diode lasers; external differential quantum efficiency; power conversion efficiency; single stripe devices; temperature 10 degC; temperature 50 degC; wavelength 975 nm; Cooling; Cryogenics; Diode lasers; Optical devices; Optical materials; Power conversion; Power generation; Temperature dependence; Testing; Voltage; (140.2020) Diode Lasers; (140.5960) Semiconductor lasers; (230.5590) Quantum-well devices;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628740
