Title :
Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology
Author :
Negra, Renato ; Bachtold, Wemer
Author_Institution :
Lab. for Electromagnetic Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A highly efficient monolithically integrated class-E power amplifier for the 22-25 GHz range is presented. The circuit is fabricated with a 0.12 μm GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23 GHz from a 2.2 V supply. To the authors´ knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.
Keywords :
III-V semiconductors; MMIC power amplifiers; coplanar waveguides; gallium arsenide; high electron mobility transistors; power HEMT; switched mode power supplies; 0.12 micron; 2.2 V; 22 to 25 GHz; GaAs; HEMT; coplanar waveguide method; high electron mobility transistor; monolithic microwave integrated circuit; monolithically integrated class E power amplifier; power added efficiency; switched mode high efficiency Ka band MMIC power amplifier; Frequency; Gallium arsenide; High power amplifiers; Impedance; Integrated circuit technology; MMICs; PHEMTs; Power amplifiers; Power harmonic filters; Radiofrequency amplifiers;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on
Print_ISBN :
0-7803-8574-8
DOI :
10.1109/EDMO.2004.1412392
