Title :
Analysis of microwave X-band HEMT limiters based on self-limiting effect
Author :
Szczepaniak, Zenon R. ; Arvaniti, Andrzej
Author_Institution :
Telecommun. Res. Inst., Warsaw, Poland
Abstract :
In this paper the self-limiting effect in microwave limiters using transistors with Schottky junction was investigated. The mathematical analysis how the input power detection influences on output power characteristic was presented. The analysis was done on the basis of the transistor IV curves. The calculations and measurement results of a realized limiter circuit was also presented.
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; microwave field effect transistors; microwave limiters; Schottky junction; high electron mobility transistor; mathematical analysis; microwave X-band HEMT limiters; microwave limiters circuit; self limiting effect; transistor current-voltage curves; Breakdown voltage; Frequency; HEMTs; Microwave measurements; Power generation; Signal analysis; Threshold voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on
Print_ISBN :
0-7803-8574-8
DOI :
10.1109/EDMO.2004.1412393
