Palladium Schottky diodes on ZnO thin films grown on GaAs

Author

Weichsel, C. ; Pagni, O. ; Somhlahlo, N. ; van Wyk, E. ; Leitch, A.W.R.

Author_Institution

Dept. of Phys., Port Elizabeth Univ., South Africa

fYear

2004

fDate

8-9 Nov. 2004

Firstpage

23

Lastpage

26

Abstract

We present systematic studies of the current-voltage characteristics of palladium Schottky diodes on ZnO layers grown on GaAs and demonstrate the advantages of using GaAs as a substrate. In terms of possible applications of the Pd/ZnO/GaAs system for gas sensing devices, transparent electronics and optoelectronics we study the sensitivity of these devices to hydrogen gas and light.

Keywords

II-VI semiconductors; III-V semiconductors; Schottky diodes; gallium arsenide; gas sensors; palladium; semiconductor thin films; sensitivity; wide band gap semiconductors; zinc compounds; GaAs substrate; Pd-ZnO-GaAs; Pd-ZnO-GaAs system; ZnO thin films; current-voltage curves; device sensitivity; gas sensing devices; hydrogen gas; hydrogen light; optoelectronics; palladium Schottky diodes; transparent electronics; Gallium arsenide; Gas detectors; Light emitting diodes; Lighting; Palladium; Schottky barriers; Schottky diodes; Substrates; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on

Print_ISBN

0-7803-8574-8

Type

conf

DOI

10.1109/EDMO.2004.1412394

Filename

1412394