DocumentCode
287977
Title
Automatic in-line measurement for the identification of killer defects
Author
Wilson, Dave ; Walton, Anthony J.
Author_Institution
Motor Ltd., Glasgow, UK
fYear
1994
fDate
34451
Firstpage
42491
Lastpage
42498
Abstract
This paper describes the use of Fast Static RAMs (FSRAM) to identify the locations of defects which are then used to wafer map defect sites. It describes a method to automate the correlation of in-line with end-of-line defect measurements to quickly identify the source of killer defects. In-line defects are identified using a Tencor Surfscan 7000 and these defect locations are overlayed onto failing bitmap data from functional testers. The analysis and overlay software has been written using a commonly available database, RS/1 to automatically generate histograms of defects-to-fail ratios for each monitoring stage. This rapidly identifies the the process steps that have a major impact upon yield and these can then be targeted as part of a defect reduction strategy. Using this approach large quantities of data can be quickly processed allowing realistic SPC defectivity limits to be set from large sample sizes
Keywords
SRAM chips; automatic testing; crystal defects; failure analysis; semiconductor device testing; semiconductor technology; FSRAM; Fast Static RAMs; RS/1 database; SPC defectivity limits; Tencor Surfscan 7000; analysis software; automatic in-line measurement; defect locations; defect reduction; defect sites; defects-to-fail ratios; end-of-line measurements; failing bitmap data; functional testers; histograms; killer defects; monitoring; overlay software; wafer mapping; yield;
fLanguage
English
Publisher
iet
Conference_Titel
Semiconductor Processing - Quality through Measurement, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
367914
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