Modelling of a modulator based on resonant tunnelling diode switching

Author

Calado, J.J.N. ; Figueiredo, J.M.L. ; Ironside, C.N.

Author_Institution

Dept. de Fisica, Algarve Univ., Faro, Portugal

fYear

2004

fDate

8-9 Nov. 2004

Firstpage

39

Lastpage

42

Abstract

The optoelectronic effect integrating a double barrier resonant tunnelling diode within a unipolar optical waveguide is analysed. Due to the non-linearities introduced by the double barrier resonant tunnelling diode (RTD) the unipolar optical waveguide (OW) can be employed both as an optical modulator and as an optical detector. The RTD also provides electrical gain over a wide bandwidth. The RTD-OW modelling results confirm preliminary experimental results, foreseeing modulation depths up to 23 dB and negative chirp in the wavelength range analysed (1500 nm to 1600 nm).

Keywords

III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; gallium arsenide; indium compounds; integrated optoelectronics; nonlinear optics; optical fibre communication; optical waveguide theory; resonant tunnelling diodes; 1500 to 1600 nm; AlGaAs-GaAs; InGaAlAs-InP; RTD; double barrier resonant tunnelling diode switching; electro-optical converter; integrated optoelectronics; modulation depths; negative chirp modulation; nonlinear optics; nonlinearities; optical detector; optical fibre communication; optical modulator; optoelectronic effect; photodetectors; unipolar optical waveguide; Diodes; High speed optical techniques; Integrated optics; Optical devices; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Resonant tunneling devices; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on

Print_ISBN

0-7803-8574-8

Type

conf

DOI

10.1109/EDMO.2004.1412396

Filename

1412396