Author :
Masuoka, Fujio ; Ariizumi, S. ; Iwase, Takahiro ; Ono, M. ; Norio Endo
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Abstract :
This paper will describe a 1Mb programmable ROM incorporating a through-hole programmed mask ROM cell and a CMOS fully static sense amp. The ROM has been fabricated using a double poly-Si P-well CMOS technology, achieving a cell size of 33μm2.
Keywords :
CMOS technology; Current supplies; Electronics packaging; Emergency power supplies; Negative feedback; Read only memory;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156660
