Title :
A 55ns CMOS EEPROM
Author :
Zeman, Robert ; Chun Ho ; Chang, Ting-Hao
Author_Institution :
Excel Microelectronics, Inc., San Jose, CA
Abstract :
A 32,768 (4K×8) CMOS EEPROM with a 55ns address access time will be discussed. Access time through the memory array was accomplished by using two memory cells per bit. A differential signal is generated on complementary bit lines to reduce the voltage swing necessary for sensing.
Keywords :
Delay effects; Differential amplifiers; EPROM; Low voltage; Random access memory;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156661
