DocumentCode :
2879852
Title :
A 1Mb EPROM
Author :
Okumura, Katsuhiro ; Ohya, S. ; Yamamoto, Manabu ; Watanabe, Toshio ; Shimamura, Y. ; Kikuchi, Masashi
Author_Institution :
NEC Corporation, Kanagawa, Japan
Volume :
XXVII
fYear :
1984
fDate :
22-24 Feb. 1984
Firstpage :
140
Lastpage :
141
Abstract :
A 1Mb fully static EPROM utilizing a 1.2μm design rule technology will be discussed. The chip features typical access time of 200ns, a programming voltage of approximately 13V, and can be used either as 64K × 16 or 128K × 8 organization.
Keywords :
Artificial intelligence; EPROM; Power amplifiers; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1984.1156663
Filename :
1156663
Link To Document :
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