• DocumentCode
    2879890
  • Title

    512K EPROMs

  • Author

    Rinerson, D. ; Ahrens, Markus ; Jih Lein ; Venkatesh, B. ; Tien Lin ; Song, Peter ; Longcor, S. ; Shen, L. ; Rogers, D. ; Briner, M.

  • Author_Institution
    Advanced Micro Devices, Sunnyvale, CA, USA
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    136
  • Lastpage
    137
  • Abstract
    EPROMs utilizing double polysilicon floating gate technology that achieve bit densities through 64Kb to 512Kb and access times of 150ns will be reported. Through the use of an NMOS process with 1.7μm design rules, a minimum cell size of 36.6μm2has been obtained.
  • Keywords
    Circuits; Decoding; Delay lines; EPROM; Inorganic materials; Material storage; Nonvolatile memory; Read only memory; Secondary generated hot electron injection; Variable structure systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156665
  • Filename
    1156665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2879890