• DocumentCode
    2879902
  • Title

    Stability and soft error rates of SRAM cells

  • Author

    Chappell, B. ; Schuster, Stefan ; Sai-Halasz, G.

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    162
  • Lastpage
    163
  • Abstract
    Graphical techniques for analyzing the impact of device sizes, threshold tracking, load resistor values and other design parameters on the stability and soft error rate of SRAMs, illustrated via applicat)ons to a high-speed 64K RAM, will be presented.
  • Keywords
    Circuit simulation; Circuit stability; Degradation; Error analysis; Random access memory; Region 2; Region 4; Resistors; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156666
  • Filename
    1156666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2879902