Title :
Stability and soft error rates of SRAM cells
Author :
Chappell, B. ; Schuster, Stefan ; Sai-Halasz, G.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
Abstract :
Graphical techniques for analyzing the impact of device sizes, threshold tracking, load resistor values and other design parameters on the stability and soft error rate of SRAMs, illustrated via applicat)ons to a high-speed 64K RAM, will be presented.
Keywords :
Circuit simulation; Circuit stability; Degradation; Error analysis; Random access memory; Region 2; Region 4; Resistors; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156666
